STRAINED SILICON-ON-INSULATOR BY ANODIZATION OF A BURIED p+ SILICON GERMANIUM LAYER

ABSTRACT

A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting the doped and relaxed semiconductor layer into a porous semiconductor via an electrolytic anodization process, and oxidizing to convert the porous semiconductor layer into a buried oxide layer. The method provides a SSOI substrate that includes a relaxed semiconductor layer on a substrate; a high-quality buried oxide layer on the relaxed semiconductor layer; and a strained semiconductor layer on the high-quality buried oxide layer. In accordance with the present invention, the relaxed semiconductor layer and the strained semiconductor layer have identical crystallographic orientations.

RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.11/620,663, filed on Jan. 6, 2007, which is a divisional of U.S.application Ser. No. 10/883,887 filed Jul. 2, 2004, now U.S. Pat. No.7,172,930, issued on Feb. 6, 2007.

FIELD OF THE INVENTION

The present invention relates to a semiconductor substrate material andto a method of fabricating the same. More specifically, the presentinvention relates to a strained semiconductor, e.g., Si-on-insulator(SSOI) substrate material and a robust method of fabricating the samethat avoids wafer bonding.

BACKGROUND OF THE INVENTION

In the semiconductor industry, there has been an increasing interest inenhancing performance of complementary metal oxide semiconductor (CMOS)devices by replacing conventional silicon-on-insulator (SOI) substrateswith strained semiconductor-on-insulator (SSOI) substrates. The reasonbehind this interest is that SSOI substrates provide higher carrier(electrons/holes) mobility than a conventional SOI substrate. The strainin the SSOI substrates can either be compressive or tensile.

Conventional methods to fabricate SSOI substrates typically require alayer transfer process wherein a strained Si-containing layer located ona relaxed SiGe layer is transferred onto a handle wafer. In particular,the conventional process includes first creating a relaxed SiGe layer ofa few microns in thickness on a surface of a Si-containing substrate.The relaxed SiGe layer typically has an in-plane lattice parameter thatis larger than that of Si. Next, a Si-containing layer is grown on therelaxed SiGe layer. Because the SiGe layer has a larger in-plane latticeparameter as compared to Si, the Si-containing layer is under strain.

The structure, including the strained Si-containing layer located on arelaxed SiGe layer, is then bonded to a handle wafer, which includes aninsulating layer, such as an oxide layer. The bonding occurs between thestrained Si-containing layer and the insulator layer. The Si-containingsubstrate and the relaxed SiGe layer are then typically removed from thebonded structure to provide a strained Si-on-insulator substrate.

The conventional SSOI substrate preparation method described above isquite expensive and low-yielding because it combines two rather advancedsubstrate technologies, i.e., high-quality, thick SiGe/strain Si growth,and wafer bonding. Moreover, the conventional preparation method isunattractive for manufacturing a large volume of substrates.

In view of the above, a cost effective and manufacturable solution tofabricate SSOI substrates is required for future high-performanceSi-containing CMOS products.

SUMMARY OF THE INVENTION

The present invention provides a cost-effective and manufacturablesolution to produce SSOI substrates that avoids wafer bonding which istypically required in conventional technologies to produce SSOIsubstrate materials. In particular, the method of the present invention,which fabricates SSOI substrates, includes creating a buried porouslayer underneath a strained semiconductor layer. The porous layer isthen converted into a buried oxide layer by employing a high temperatureoxidation/anneal step such that only a part of the strainedsemiconductor layer is consumed during processing.

The method provides a SSOI substrate that includes a strainedsemiconductor layer atop an oxide layer, the oxide layer is located on arelaxed semiconductor template. Unlike the conventional processdescribed above, the strained semiconductor layer and the relaxedsemiconductor layer have a commensurate, i.e., identical, crystalorientation. Moreover, the oxide layer that is formed by the inventivemethod is of ‘high-quality’ meaning that the oxide layer has a leakageof about 1 microAmp or less and a breakdown field of about 2Megavolts/cm or greater.

In broad terms, the method of the present invention comprises the stepsof:

providing a structure that comprises a substrate, a relaxedsemiconductor layer on the substrate, a doped and relaxed semiconductorlayer on the relaxed semiconductor layer, and a strained semiconductorlayer on the doped and relaxed semiconductor layer, said relaxedsemiconductor layer, said doped and relaxed semiconductor layer and saidstrained semiconductor layer have identical crystallographicorientations;converting the doped and relaxed semiconductor layer underneath thestrained semiconductor layer into a buried porous layer; andannealing the structure including the buried porous layer to provide astrained semiconductor-on-insulator substrate, wherein during saidannealing the buried porous layer is converted into a buried oxidelayer.

In addition to the method described above the present invention alsorelates to the SSOI substrate that is formed. Specifically, the SSOIsubstrate of the instant invention comprises:

a substrate;a relaxed semiconductor layer on the substrate;a high-quality buried oxide layer on the relaxed semiconductor layer;anda strained semiconductor layer on the high-quality buried oxide layer,wherein the relaxed semiconductor layer and the strained semiconductorlayer have identical crystallographic orientations.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D are pictorial representations (through cross sectionalviews) illustrating the basic processing steps employed in fabricatingthe inventive SSOI substrate. The inventive SSOI substrate shown in FIG.1D contains a strained semiconductor layer and a buried oxide that areboth unpatterned.

FIGS. 2A-2B are pictorial representations (through cross-sectionalviews) illustrating patterned SSOI substrates that are fabricated usingthe method of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides a method of fabricating a SSOIsubstrate and the SSOI substrate produced by the method, will now bedescribed in greater detail by referring to the drawings that accompanythe present application. The drawings are provided for illustrativepurposes only and are thus not drawn to scale. In the drawings, like andcorresponding elements are referred to by like reference numerals.

The method of the present invention begins with first providing thestructure 10 shown, for example, in FIG. 1A. Structure 10 includes asubstrate 12, a relaxed semiconductor, e.g., SiGe alloy, layer 14located on a surface of substrate 12, a doped and relaxed semiconductorlayer 16 located on the relaxed semiconductor layer 14, and a strainedsemiconductor layer 18 located on a surface of the doped and relaxedsemiconductor layer 16. In accordance with the present invention, layers14, 16 and 18 have the same crystallographic orientation since thoselayers are each formed by epitaxial growth.

Examples of various epitaxial growth processes that can be employed inthe present invention in fabricating layers 14, 16 and 18 on substrate12 include, for example, rapid thermal chemical vapor deposition(RTCVD), low-energy plasma deposition (LEPD), ultra-high vacuum chemicalvapor deposition (UHVCVD)), atmospheric pressure chemical vapordeposition (APCVD) and molecular beam epitaxy (MBE).

The substrate 12 employed in the present invention may be comprised ofany material or material layers including, for example, crystallineglass or metal, but preferably the substrate 12 is a crystallinesemiconductor substrate. Examples of semiconductor substrates that canbe employed as substrate 12 include, but are not limited to: Si, SiGe,SiC, SiGeC, GaAs, InAs, InP, and other III/IV or II/VI compoundsemiconductors. The term “semiconductor substrate” also includespreformed silicon-on-insulator (SOI) or SiGe-on-insulator (SGOI)substrates which may include any number of buried insulating(continuous, non-continuous or a combination of continuous andnon-continuous) regions therein. In one preferred embodiment, thesubstrate 12 is a Si-containing substrate. The substrate 12 may beundoped or it may be an electron rich or hole-rich substrate, i.e.,doped substrates.

The relaxed semiconductor layer 14 is then epitaxially grown on asurface of the substrate 12 using one of the above mentioned processes.In the following description the relaxed semiconductor layer 14 isreferred to a relaxed SiGe layer 14 since that semiconductor materialrepresents a preferred material for layer 14. The term “SiGe alloylayer” denotes a SiGe layer that comprises up to 99 atomic percent Ge.More typically, the SiGe alloy layer comprises from about 1 to about 99atomic percent Ge, with a Ge atomic percent from about 10 to about 50atomic percent being more highly preferred.

The relaxed SiGe alloy layer 14 may be a single layer having acontinuous distribution of Ge, or it may be a graded layer having avarying content of Ge included within different regions of the layer. Asstated above, layer 14 is a relaxed layer having a measured degree ofrelaxation from about 10% or greater. Typically, the surface region ofthe relaxed semiconductor layer 14 is metastable having a defect(stacking faults, pile-up and threading) density that is typically about1E5 defects/cm³ or greater.

The relaxed semiconductor layer 14 may be doped or undoped. The type ofdopant and concentration of dopant within the layer 14 is arbitrary andcan be predetermined by a skilled artisan. When doped, relaxed layer 14typically has a dopant concentration that is greater than 1E17atoms/cm³. Doped layer 14 is formed by providing a dopant source withthe Si source, or the Ge source, or both sources used during theepitaxial growth process.

The thickness of the relaxed semiconductor layer 14 may vary so long asa relaxed layer can be formed. The thickness of the relaxedsemiconductor layer 14 is dependent on the Ge content of the layer.Typically, and for a relaxed semiconductor layer 14 having a Ge contentof less than about 50 atomic %, layer 14 has a thickness from about 1 toabout 5000 nm, with a thickness from about 1000 to about 3000 nm beingmore typical.

Although relaxed SiGe alloy templates are preferred, the presentinvention also contemplates the use of other semiconductor materialsthat can be formed in relaxed state.

Next, a doped and relaxed semiconductor layer 16 is formed on therelaxed semiconductor layer 14. The doped and relaxed semiconductorlayer 16 may include p- or n-type dopants, with p-type dopants beinghighly preferred. P-type dopants include Ga, Al, B and BF₂. The dopedand relaxed semiconductor layer 16 may be a separate layer, as shown inFIG. 1A, or it can be an upper portion of the previously formed relaxedsemiconductor layer 14. The term “semiconductor” when used in contentwith layer 16 denotes any semiconductor material including, for example,Si, SiGe, SiC, and SiGeC. Preferably, the doped and relaxedsemiconductor layer 16 is a Si-containing semiconductor, with Si andSiGe being most preferred.

In accordance with the present invention, the doped and relaxedsemiconductor layer 16 is a layer that is more heavily doped than thesurrounding layers, i.e., layers 14 and 18. Typically, the doped andrelaxed semiconductor layer 16 contains a p-type dopant concentration ofabout 1E19 atoms/cm³or greater, with a p-type dopant concentration fromabout 1E20 to about 5E20 atoms/cm³ being more typical. The doped andrelaxed semiconductor layer 16 is formed using one of the abovementioned epitaxial growth processes in which the dopant source isincluded with the semiconductor source. The doped and relaxedsemiconductor material 16 may have an in-plane lattice parameter that iseither larger or smaller than that of virgin Si.

The doped and relaxed semiconductor layer 16 is a thin layer whosethickness will define the thickness of the buried oxide layer to besubsequently formed. Typically, the doped and relaxed semiconductorlayer 16 has a thickness from about 1 to about 1000 nm, with a thicknessfrom about 10 to about 200 nm being more typical.

After forming the doped and relaxed semiconductor layer 16, a strainedsemiconductor layer 18 is formed on top of the doped and relaxedsemiconductor layer 16 using one of the above-mentioned epitaxial growthprocesses. The strained semiconductor layer 18 may be comprised of oneof the semiconductor materials mentioned above in connection with layer16. The strained semiconductor layer 18 and the doped and relaxedsemiconductor 16 can thus be comprised of the same or differentsemiconductor material. The strained semiconductor 18 can have a tensileor compressive stress.

It is noted that the growth of layers 14, 16 and 18 may occur using thesame or different epitaxial growth process. Moreover, it is alsocontemplated to form layers 14, 16 and 18 in the same reactor chamberwithout breaking vacuum.

The strained semiconductor layer 18 may be doped or undoped. When doped,the strained semiconductor layer 18 typically has a dopant concentrationof about 1E15 atoms/cm³ or greater. The thickness of layer 18 istypically from about 5 to about 2000 nm, with a thickness from about 10to about 500 nm being more typical.

In one embodiment of the present invention, the strained semiconductorlayer 18 and the doped and relaxed semiconductor layer 16 are comprisedof the same or different Si-containing semiconductor, with Si or SiGebeing highly preferred.

In a highly preferred embodiment of the present invention, the strainedsemiconductor layer 18 and the relaxed semiconductor layer 14 are bothdoped layers having a dopant concentration of about 1E15 atoms/cm³ orgreater, while the doped and relaxed semiconductor layer 16 is a p-dopedlayer having a dopant concentration of about 1E20 atoms/cm³ or greater.

In accordance with the present invention, layers 14, 16 and 18 have thesame crystallographic orientation as substrate 12 since the variouslayers are formed by epitaxial growth. Hence, layers 14, 16 and 18 canhave a (100), (110), (111) or any other crystallographic orientation.

Next, the structure shown in FIG. 1A is subjected to an electrolyticanodization process that is capable of converting the doped and relaxedsemiconductor layer 16 into a porous region. The structure, after theelectrolytic anodization process has been performed, is shown, forexample in FIG. 1B. In the drawing, reference numeral 20 denotes theporous region or layer.

The anodization process is performed by immersing the structure shown inFIG. 1A into an HF-containing solution while an electrical bias isapplied to the structure with respect to an electrode also placed in theHF-containing solution. In such a process, the structure typicallyserves as the positive electrode of the electrochemical cell, whileanother semiconducting material such as Si, or a metal is employed asthe negative electrode.

In general, the HF anodization converts the doped and relaxedsemiconductor layer 16 into a porous semiconductor layer 20. The rate offormation and the nature of the porous semiconductor layer 20 so-formed(porosity and microstructure) is determined by both the materialproperties, i.e., doping type and concentration, as well as the reactionconditions of the anodization process itself (current density, bias,illumination and additives in the HF-containing solution). Generally,the porous semiconductor layer 20 formed in the present invention has aporosity of about 0.1% or higher.

The term “HF-containing solution” includes concentrated HF (49%), amixture of HF and water, a mixture of HF and a monohydric alcohol suchas methanol, ethanol, propanol, etc, or HF mixed with at least onesurfactant. The amount of surfactant that is present in the HF solutionis typically from about 1 to about 50%, based on 49% HF.

The anodization process, which converts the doped and relaxedsemiconductor layer 16 into a porous semiconductor layer 20, isperformed using a constant current source that operates at a currentdensity from about 0.05 to about 50 milliAmps/cm². A light source may beoptionally used to illuminate the sample. More preferably, theanodization process of the present invention is employed using aconstant current source operating at a current density from about 0.1 toabout 5 milliAmps/cm².

The anodization process is typically performed at room temperature or, atemperature that is elevated from room temperature may be used.Following the anodization process, the structure is typically rinsedwith deionized water and dried. Anozidation typically occurs for a timeperiod of less than about 10 minutes, with a time period of less than 1minute being more typical.

The structure shown in FIG. 1B including the porous semiconductor layer20 is then heated, i.e., annealed, at a temperature which converts theporous semiconductor layer 20 into a buried oxide region 22. Theresultant structure is shown, for example, in FIG. 1C. As shown, thestructure includes a strained semiconductor layer 18 atop a buried oxidelayer 22. The buried oxide layer 22 is located atop the relaxedsemiconductor layer 14, which is, in turn, atop of the substrate 12.

Note that an oxide layer 24 is formed atop layer 18 during the heatingstep. This surface oxide layer, i.e., oxide layer 24, is typically, butnot always, removed from the structure after the heating step using aconventional wet etch process wherein a chemical etchant such as HF thathas a high selectivity for removing oxide as compared to semiconductoris employed. The structure, without the surface oxide layer 24, is shownin FIG. 1D.

Note that when the oxide layer 24 is removed, the above processing stepscan be repeated any number of times to provide a multilayered structurecontaining, from bottom to top, substrate/(relaxed semiconductor/buriedoxide/strained semiconductor), wherein x is greater than 1. When x is 1,the structure shown in FIG. 1D is formed.

In some embodiments of the present invention, multiple buried oxidelayers can be obtained by forming continuous layers of materials 14, 16and 18 on substrate 12 and then performing the electrolytic anodizationprocess and annealing process of the present invention.

The surface oxide layer 24 formed after the heating step of the presentinvention has a variable thickness which may range from about 10 toabout 1000 nm, with a thickness of from about 20 to about 500 nm beingmore highly preferred. Buried oxide layer 22 typically has the samethickness as previously described for the doped and relaxedsemiconductor layer 16.

Specifically, the heating step of the present invention is an annealingstep which is performed at a temperature that is greater than 400° C.,preferably greater than 1100° C. A typical temperature range for theheating step of the present invention is from about 1200° to about 1320°C.

Moreover, the heating step of the present invention is carried out in anoxidizing ambient which includes at least one oxygen-containing gas suchas O₂, NO, N₂O, ozone, air and other like oxygen-containing gases. Theoxygen-containing gas may be admixed with each other (such as anadmixture of O₂ and NO), or the gas may be diluted with an inert gassuch as He, Ar, N₂, Xe, Kr, or Ne. When a diluted ambient is employed,the diluted ambient contains from about 0.1 to about 100% ofoxygen-containing gas, the remainder, up to 100%, being inert gas.

The heating step may be carried out for a variable period of time thattypically ranges from greater than 0 minutes to about 1800 minutes, witha time period from about 60 to about 600 minutes being more highlypreferred. The heating step may be carried out at a single targetedtemperature, or various ramp and soak cycles using various ramp ratesand soak times can be employed.

The heating step is performed under an oxidizing ambient to achieve thepresence of oxide layers, i.e., layers 22 and 24. Note that the poroussemiconductor region reacts with diffused oxygen at an enhanced rate.

After heating, and subsequent removal of surface oxide layer 24, thestructure can be subjected to a thermal process (i.e., baking step) thatis capable of reducing the content of dopants present in the finalstructure. The baking step is typically performed in the presence of ahydrogen-containing ambient such as H₂. Leaching of dopants from thestructure typically occurs when this step is performed at a temperaturethat is greater than 800° C., with a temperature of greater than 1000°C. being more typical. This thermal step is optional and does not needto be performed in all instances. Leaching of dopants using the thermaltreatment process can be performed for any desired period of time.

Typically, the thermal process, which leaches dopants from thestructure, is performed for a time period from about 1 to about 60minutes. As stated above, this baking step reduces the amount of dopantwithin the SSOI substrate. Although it can be used to reduce any dopantwithin the SSOI substrate, it is particularly employed to remove boronfrom the structure.

After performing the above processing steps, conventional CMOS processcan be carried out to form one or more CMOS devices such as field effecttransistors (FETs) atop the strained semiconductor layer. The CMOSprocessing is well known to those skilled in the art; therefore detailsconcerning that processing are not needed herein.

The method of the present invention described above provides a SSOIsubstrate including a strained semiconductor layer 18 atop an oxidelayer 22, the oxide layer 22 is located atop a relaxed semiconductorlayer 14 which is located on a substrate 12. Unlike the conventionalprocess described above, the strained semiconductor layer 18 and therelaxed semiconductor layer 14 have a commensurate, i.e., identical,crystal orientation. Moreover, the oxide layer 22 that is formed by theinventive method is of ‘high-quality’ meaning that the buried oxidelayer 22 has a leakage of about 1 microAmp or less and a breakdown fieldof about 2 Megavolts or greater.

The embodiment depicted in FIGS. 1A-1D illustrates the case wherein nolayers are patterned. In another embodiment, it is also contemplated toform a structure that includes a patterned strained semiconductor layer18 on a buried oxide layer 22. One such patterned SSOI structure isshown, for example, in FIG. 2A. The patterned structure is formed usingthe same basic processing steps as described above except that prior toanodization the strained semiconductor layer 18, shown, for example, inFIG. 1A, is patterned by lithography and etching. The lithography stepincludes applying a photoresist on the strained semiconductor layer 18,exposing the photoresist to a pattern of radiation and developing thepatterned into the exposed photoresist by utilizing a conventionalresist developer. The etching step can include a wet etch process or adry etching process that selectively removes the exposed strainedsemiconductor layer 18. After stripping the patterned photoresist fromthe structure, anodization and oxidation, as described above areperformed. In some embodiments, the oxide layer 22 not underneath thestrained semiconductor layer can be removed exposing the relaxedsemiconductor layer 14.

In yet another embodiment of the present invention, a patterned SSOIsubstrate, such as illustrated in FIG. 2B, can be formed. This patternedSSOI substrate is formed by first conducting the processing steps ofepitaxial growth, anodization and oxidation, and then patterning thestructure by lithography and etching. The etching step may be stoppedatop a surface of oxide layer 22 providing the structure shown in FIG.2A, or it can be stopped when a surface of the relaxed semiconductorlayer 14 is reached, See FIG. 2B. The etch used in removing the exposedportions of both layer 18 and 22 can include a single etch step, ormultiple etching steps may be employed.

CMOS processing can also be performed on the patterned SSOI substratesas well.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the scope and the spiritof the present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1. A semiconductor structure comprising: a substrate; a relaxedsemiconductor layer on the substrate; a high-quality buried oxide layeron the relaxed semiconductor layer; and a strained semiconductor layeron the high-quality buried oxide layers wherein the relaxedsemiconductor layer and the strained semiconductor layer have identicalcrystallographic orientations.
 2. The semiconductor structure of claim 1wherein said substrate is a crystalline semiconductor substrate.
 3. Thesemiconductor structure of claim 2 wherein said crystallinesemiconductor substrate is doped.
 4. The semiconductor structure ofclaim 2 wherein said crystalline semiconductor substrate is aSi-containing substrate.
 5. The semiconductor structure of claim 1wherein said relaxed semiconductor layer comprises a SiGe alloy layerhaving up to 99 atomic percent Ge.
 6. The semiconductor structure ofclaim 1 wherein said relaxed semiconductor layer has a measured degreeof relaxation of about 10% or greater.
 7. The semiconductor structure ofclaim 1 wherein said relaxed semiconductor layer has a surface regionthat is metastable and has a defect density of about 1E5 defects/cm³ orgreater.
 8. The semiconductor structure of claim 1 wherein said relaxedsemiconductor layer is a graded SiGe layer having a varying content ofGe.
 9. The semiconductor structure of claim 1 wherein said relaxedsemiconductor layer is doped.
 10. The semiconductor structure of claim 1wherein said strained semiconductor layer is under a compressive ortensile strain.
 11. The semiconductor structure of claim 1 wherein saidstrained semiconductor layer comprises a Si-containing semiconductor.12. The semiconductor structure of claim 11 wherein said Si-containingsemiconductor comprises Si or SiGe.
 13. The semiconductor structure ofclaim 1 wherein said strained semiconductor is a doped layer having adopant concentration of about 1E15 atoms/cm³ or greater.
 14. Thesemiconductor structure of claim 1 wherein said relaxed semiconductorlayer and said strained semiconductor layer have a (100), (110) or (111)crystal orientation.
 15. The semiconductor structure of claim 1 whereinsaid high-quality buried oxide layer has a leakage current of about 1microAmp or less.
 16. The semiconductor structure of claim 1 whereinsaid high-quality buried oxide layer has a breakdown field of about 2Megavolts or greater.
 17. The semiconductor structure of claim 1 whereinsaid strained semiconductor layer is patterned.
 18. The semiconductorstructure of claim 17 wherein said high-quality buried oxide layer ispatterned.
 19. The semiconductor structure of claim 1 further comprisingat least one complementary metal oxide semiconductor device located on asurface of said strained semiconductor layer.